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Ultraviolet emission from Sb-doped p-type ZnO based heterojunction light-emitting diodes

✍ Scribed by Mandalapu, L. J.; Yang, Z.; Chu, S.; Liu, J. L.

Book ID
120830308
Publisher
American Institute of Physics
Year
2008
Tongue
English
Weight
696 KB
Volume
92
Category
Article
ISSN
0003-6951

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## Abstract ZnO/GaN p‐i‐n heterojunctions light emitting diodes were fabricated by plasma‐assisted molecular beam epitaxy. We make use of high resistivity of nitrogen doped ZnO to fabricate n‐ZnO/i‐ZnO/p‐GaN heterojunction light emitting diode. The emission of i‐ZnO was obtained due to the limitati