Ultraviolet electroluminescence of ZnO b
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S. J. Jiao; Y. M. Lu; D. Z. Shen; Z. Z. Zhang; B. H. Li; J. Y. Zhang; B. Yao; Y.
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Article
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2006
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John Wiley and Sons
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English
⚖ 176 KB
## Abstract ZnO/GaN p‐i‐n heterojunctions light emitting diodes were fabricated by plasma‐assisted molecular beam epitaxy. We make use of high resistivity of nitrogen doped ZnO to fabricate n‐ZnO/i‐ZnO/p‐GaN heterojunction light emitting diode. The emission of i‐ZnO was obtained due to the limitati