𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Ultraviolet electroluminescence from n-ZnO/p-NiO heterojunction light-emitting diode

✍ Scribed by R. Deng; B. Yao; Y.F. Li; Y. Xu; J.C. Li; B.H. Li; Z.Z. Zhang; L.G. Zhang; H.F. Zhao; D.Z. Shen


Book ID
118014944
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
352 KB
Volume
134
Category
Article
ISSN
0022-2313

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Ultraviolet electroluminescence of ZnO b
✍ S. J. Jiao; Y. M. Lu; D. Z. Shen; Z. Z. Zhang; B. H. Li; J. Y. Zhang; B. Yao; Y. πŸ“‚ Article πŸ“… 2006 πŸ› John Wiley and Sons 🌐 English βš– 176 KB

## Abstract ZnO/GaN p‐i‐n heterojunctions light emitting diodes were fabricated by plasma‐assisted molecular beam epitaxy. We make use of high resistivity of nitrogen doped ZnO to fabricate n‐ZnO/i‐ZnO/p‐GaN heterojunction light emitting diode. The emission of i‐ZnO was obtained due to the limitati

Electroluminescence from a n-ZnO nanorod
✍ B. Ling; X.W. Sun; J.L. Zhao; S.T. Tan; Z.L. Dong; Y. Yang; H.Y. Yu; K.C. Qi πŸ“‚ Article πŸ“… 2009 πŸ› Elsevier Science 🌐 English βš– 895 KB

n-ZnO nanorod/p-CuAlO 2 heterojunction light-emitting diodes have been fabricated on p + -Si substrates. The CuAlO 2 thin film was deposited by dc-magnetron sputtering while the ZnO nanorods (NRs) were fabricated using the vapor-phase transport method. The current-voltage characteristics of the devi