Ultraviolet electroluminescence from p-GaN/i-ZnO/n-ZnO heterojunction light-emitting diodes
β Scribed by H. Y. Xu; Y. C. Liu; Y. X. Liu; C. S. Xu; C. L. Shao; R. Mu
- Publisher
- Springer
- Year
- 2005
- Tongue
- English
- Weight
- 315 KB
- Volume
- 80
- Category
- Article
- ISSN
- 0721-7269
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## Abstract ZnO/GaN pβiβn heterojunctions light emitting diodes were fabricated by plasmaβassisted molecular beam epitaxy. We make use of high resistivity of nitrogen doped ZnO to fabricate nβZnO/iβZnO/pβGaN heterojunction light emitting diode. The emission of iβZnO was obtained due to the limitati
n-ZnO nanorod/p-CuAlO 2 heterojunction light-emitting diodes have been fabricated on p + -Si substrates. The CuAlO 2 thin film was deposited by dc-magnetron sputtering while the ZnO nanorods (NRs) were fabricated using the vapor-phase transport method. The current-voltage characteristics of the devi