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Electroluminescence from a n-ZnO nanorod/p-CuAlO2 heterojunction light-emitting diode

✍ Scribed by B. Ling; X.W. Sun; J.L. Zhao; S.T. Tan; Z.L. Dong; Y. Yang; H.Y. Yu; K.C. Qi

Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
895 KB
Volume
41
Category
Article
ISSN
1386-9477

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✦ Synopsis

n-ZnO nanorod/p-CuAlO 2 heterojunction light-emitting diodes have been fabricated on p + -Si substrates. The CuAlO 2 thin film was deposited by dc-magnetron sputtering while the ZnO nanorods (NRs) were fabricated using the vapor-phase transport method. The current-voltage characteristics of the devices showed good rectifying behavior with a high forward-to-reverse current ratio of around 120 at 77 V. Strong ultraviolet electro-luminescence centered at $390 nm and a broad green-band emission were observed from the diode at room-temperature. The p-CuAlO 2 layer was found to facilitate hole injection from p + -Si into n-ZnO while confining the electrons at ZnO/CuAlO 2 interface, thus effectively enhancing the recombination emission efficiency in ZnO NRs.

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## Abstract Uniform SnO~2~ nanorod arrays have been deposited at low temperature by plasma‐enhanced chemical vapor deposition (PECVD). ZnO surface modification is used to improve the selectivity of the SnO~2~ nanorod sensor to H~2~ gas. The ZnO‐modified SnO~2~ nanorod sensor shows a normal n‐type r