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A new approach to white light emitting diodes of p-GaN/i-ZnO/n-ZnO heterojunctions

✍ Scribed by L. Zhao; C.S. Xu; Y.X. Liu; C.L. Shao; X.H. Li; Y.C. Liu

Publisher
Springer
Year
2008
Tongue
English
Weight
445 KB
Volume
92
Category
Article
ISSN
0721-7269

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## Abstract Vertically aligned ZnO nanorods (NRs) with a diameter in the range of 160–200 nm were grown on p‐GaN/sapphire substrates by aqueous chemical growth technique and white light emitting diodes (LEDs) are fabricated. The properties of this LED were investigated by parameter analyzer, cathod