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n-ZnO:Ga/i-ZnO/p-Si heterojunction light emitting diodes fabricated on patterned Si substrates

✍ Scribed by Mi Kyung Choi; Won Suk Han; Young Yi Kim; Bo Hyun Kong; Hyung Koun Cho; Jae Hyun Kim; Hong-Seok Seo; Kang-Pil Kim; Jung-Ho Lee

Publisher: Springer US
Year: 2009
Tongue: English
Weight: 400 KB
Volume: 20
Category: Article
ISSN: 0957-4522
DOI: 10.1007/s10854-009-9854-y

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## Abstract Er‐doped ZnO/Si hetero‐junctions have been formed by laser ablating an Er‐contained ZnO target onto p‐Si(100) substrates. Light emitting diodes fabricated by using these samples exhibited bright green (536 nm and 556 nm), red (665 nm) and 1.54 µm emissions at room temperature. A light e