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Excitonic electroluminescence from ZnO-based heterojunction light emitting diodes

✍ Scribed by Sun, J W; Lu, Y M; Liu, Y C; Shen, D Z; Zhang, Z Z; Li, B H; Zhang, J Y; Yao, B; Zhao, D X; Fan, X W

Book ID
120002251
Publisher
Institute of Physics
Year
2008
Tongue
English
Weight
560 KB
Volume
41
Category
Article
ISSN
0022-3727

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## Abstract ZnO/GaN p‐i‐n heterojunctions light emitting diodes were fabricated by plasma‐assisted molecular beam epitaxy. We make use of high resistivity of nitrogen doped ZnO to fabricate n‐ZnO/i‐ZnO/p‐GaN heterojunction light emitting diode. The emission of i‐ZnO was obtained due to the limitati