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Enhanced electroluminescence from ZnO-based heterojunction light-emitting diodes by hydrogen plasma treatment

✍ Scribed by S. G. Zhang; X. W. Zhang; J. X. Wang; J. B. You; Z. G. Yin; J. J. Dong; B. Cui; A. M. Wowchak; A. M. Dabiran; P. P. Chow

Book ID
112183101
Publisher
John Wiley and Sons
Year
2010
Tongue
English
Weight
218 KB
Volume
5
Category
Article
ISSN
1862-6254

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## Abstract ZnO/GaN p‐i‐n heterojunctions light emitting diodes were fabricated by plasma‐assisted molecular beam epitaxy. We make use of high resistivity of nitrogen doped ZnO to fabricate n‐ZnO/i‐ZnO/p‐GaN heterojunction light emitting diode. The emission of i‐ZnO was obtained due to the limitati