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Localized surface plasmon-enhanced electroluminescence from ZnO-based heterojunction light-emitting diodes

✍ Scribed by Zhang, S. G.; Zhang, X. W.; Yin, Z. G.; Wang, J. X.; Dong, J. J.; Gao, H. L.; Si, F. T.; Sun, S. S.; Tao, Y.

Book ID
120083068
Publisher
American Institute of Physics
Year
2011
Tongue
English
Weight
883 KB
Volume
99
Category
Article
ISSN
0003-6951

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## Abstract ZnO/GaN p‐i‐n heterojunctions light emitting diodes were fabricated by plasma‐assisted molecular beam epitaxy. We make use of high resistivity of nitrogen doped ZnO to fabricate n‐ZnO/i‐ZnO/p‐GaN heterojunction light emitting diode. The emission of i‐ZnO was obtained due to the limitati