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Ultraviolet light emitting diode based on p-NiO/n-ZnO nanowire heterojunction

✍ Scribed by Jung, Byung Oh; Kwon, Yong Hun; Seo, Dong Ju; Lee, Dong Seon; Cho, Hyung Koun

Book ID
121823119
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
645 KB
Volume
370
Category
Article
ISSN
0022-0248

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## Abstract ZnO/GaN p‐i‐n heterojunctions light emitting diodes were fabricated by plasma‐assisted molecular beam epitaxy. We make use of high resistivity of nitrogen doped ZnO to fabricate n‐ZnO/i‐ZnO/p‐GaN heterojunction light emitting diode. The emission of i‐ZnO was obtained due to the limitati