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Ultraviolet Electroluminescence of Light-Emitting Diodes Based on Single n-ZnO/p-AlGaN Heterojunction Nanowires

✍ Scribed by Tang, Xiaobing; Li, Gaomin; Zhou, Shaomin

Book ID
121272118
Publisher
American Chemical Society
Year
2013
Tongue
English
Weight
388 KB
Volume
13
Category
Article
ISSN
1530-6984

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## Abstract ZnO/GaN p‐i‐n heterojunctions light emitting diodes were fabricated by plasma‐assisted molecular beam epitaxy. We make use of high resistivity of nitrogen doped ZnO to fabricate n‐ZnO/i‐ZnO/p‐GaN heterojunction light emitting diode. The emission of i‐ZnO was obtained due to the limitati