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Ultraviolet Electroluminescence From ZnO-Based n-i-p Light-Emitting Diodes

✍ Scribed by Ching-Ting Lee; Jheng-Tai Yan

Book ID
119805998
Publisher
IEEE
Year
2011
Tongue
English
Weight
351 KB
Volume
23
Category
Article
ISSN
1041-1135

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## Abstract ZnO/GaN p‐i‐n heterojunctions light emitting diodes were fabricated by plasma‐assisted molecular beam epitaxy. We make use of high resistivity of nitrogen doped ZnO to fabricate n‐ZnO/i‐ZnO/p‐GaN heterojunction light emitting diode. The emission of i‐ZnO was obtained due to the limitati