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Ultrasonically stimulated low-temperature redistribution of impurities in silicon

✍ Scribed by I. V. Ostrovskii; A. B. Nadtochii; A. A. Podolyan


Book ID
110129929
Publisher
Springer
Year
2002
Tongue
English
Weight
49 KB
Volume
36
Category
Article
ISSN
1063-7826

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Redistribution of Heavy Metal Impurities
✍ D. Knoll; A. Fischer πŸ“‚ Article πŸ“… 1982 πŸ› John Wiley and Sons 🌐 English βš– 401 KB πŸ‘ 1 views

## Abstract Based on a model for redistributing heavy metals in two‐phase‐silicon an expression is obtained, describing the intensity of redistribution, being determined by the segregation coefficient between intrinsic and phosphorus‐doped silicon and the spatial extension of the phosphorus phase.