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Plasma Stimulated Impurity Redistribution in Silicon

✍ Scribed by Koveshnikov, S. V. ;Yakimov, E. B. ;Yarykin, N. A. ;Yunkin, V. A.


Book ID
105380966
Publisher
John Wiley and Sons
Year
1989
Tongue
English
Weight
426 KB
Volume
111
Category
Article
ISSN
0031-8965

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## Abstract Based on a model for redistributing heavy metals in two‐phase‐silicon an expression is obtained, describing the intensity of redistribution, being determined by the segregation coefficient between intrinsic and phosphorus‐doped silicon and the spatial extension of the phosphorus phase.