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Impurity redistribution in Pb implanted and annealed silicon

✍ Scribed by C.E. Christodoulides

Publisher
Elsevier Science
Year
1978
Tongue
English
Weight
315 KB
Volume
67
Category
Article
ISSN
0375-9601

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## Abstract Based on a model for redistributing heavy metals in two‐phase‐silicon an expression is obtained, describing the intensity of redistribution, being determined by the segregation coefficient between intrinsic and phosphorus‐doped silicon and the spatial extension of the phosphorus phase.