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Ultrahigh Vacuum Surface Studies of the Electrochemical Atomic Layer Deposition of Indium Telluride on n-Type GaAs(100)

✍ Scribed by Kim, J.Y.; Stickney, J.L.

Book ID
126249985
Publisher
American Chemical Society
Year
2008
Tongue
English
Weight
127 KB
Volume
112
Category
Article
ISSN
1932-7447

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Ultrahigh vacuum scanning tunnelling mic
Ultrahigh vacuum scanning tunnelling microscopy studies of the decapped InAs quantum dots on GaAs(001) surface after desorption of a protective As layer
✍ Bolotov, L. N.; Nakamura, A.; Evtikhiev, V. P.; Tokranov, V. E.; Titkov, A. N. πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 372 KB πŸ‘ 2 views

The morphology and electronic properties of InAs quantum dots (QDs) on the GaAs(001) surface has been studied by ultrahigh vacuum scanning tunnelling microscopy/spectroscopy after removal of a preliminary deposited protective As layer. A thermal annealing procedure has been developed, which, applied