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Half-cycle atomic layer deposition reaction studies of Al2O3 on (NH4)2S passivated GaAs(100) surfaces

✍ Scribed by Milojevic, M.; Hinkle, C. L.; Aguirre-Tostado, F. S.; Kim, H. C.; Vogel, E. M.; Kim, J.; Wallace, R. M.

Book ID: 111907574
Publisher: American Institute of Physics
Year: 2008
Tongue: English
Weight: 653 KB
Volume: 93
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.3054348

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