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Two-step growth of high-quality GaN by hydride vapor-phase epitaxy

✍ Scribed by Tavernier, P. R.; Etzkorn, E. V.; Wang, Y.; Clarke, D. R.

Book ID: 121528309
Publisher: American Institute of Physics
Year: 2000
Tongue: English
Weight: 474 KB
Volume: 77
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.1311600

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