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Tunneling field-effect transistor with a strained Si channel and a Si0.5Ge0.5 source

✍ Scribed by Q.T. Zhao; W.J. Yu; B. Zhang; M. Schmidt; S. Richter; D. Buca; J.-M. Hartmann; R. Luptak; A. Fox; K.K. Bourdelle; S. Mantl

No coin nor oath required. For personal study only.

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