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Quantitative strain and stress measurements in Ge/Si dual channels grown on a Si0.5Ge0.5 virtual substrate

✍ Scribed by N. Cherkashin; M.J. Hÿtch; E. Snoeck; A. Claverie; J.M. Hartmann; Y. Bogumilowicz

Publisher: Elsevier Science
Year: 2005
Tongue: English
Weight: 651 KB
Volume: 124-125
Category: Article
ISSN: 0921-5107
DOI: 10.1016/j.mseb.2005.08.054

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