High mobility strained Si0.5Ge0.5/SSOI short channel field effect transistors with TiN/GdScO3 gate stack

✍ Scribed by R.A. Minamisawa; M. Schmidt; E. Durgun Özben; J.M.J. Lopes; J.M. Hartmann; K.K. Bourdelle; J. Schubert; Q.T. Zhao; D. Buca; S. Mantl

• Book ID: 113797794
• Publisher: Elsevier Science
• Year: 2011
• Tongue: English
• Weight: 863 KB
• Volume: 88
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/j.mee.2011.04.030