✦ LIBER ✦
Strained-Si n-MOS surface-channel and buried Si0.7Ge0.3 compressively-strained p-MOS fabricated in a 0.25 μm heterostructure CMOS process
✍ Scribed by D.J. Paul; M. Temple; S.H. Olsen; A.G. ONeill; Y.T. Tang; A.M. Waite; C. Cerrina; A.G.R. Evans; X. Li; J. Zhang; D.J. Norris; A.G. Cullis
- Publisher
- Elsevier Science
- Year
- 2005
- Tongue
- English
- Weight
- 343 KB
- Volume
- 8
- Category
- Article
- ISSN
- 1369-8001
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