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Tunneling Effective Mass of Electrons in Lightly N-Doped Gate Insulators

✍ Scribed by Nadimi, E.; Golz, C.; Trentzsch, M.; Herrmann, L.; Wieczorek, K.; Radehaus, C.

Book ID: 114619523
Publisher: IEEE
Year: 2008
Tongue: English
Weight: 853 KB
Volume: 55
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2008.927806

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