✦ LIBER ✦

Design and characteristics of the lightly doped drain-source (LDD) insulated gate field-effect transistor

✍ Scribed by Ogura, S.; Tsang, P.J.; Walker, W.W.; Critchlow, D.L.; Shepard, J.F.

Book ID: 114593470
Publisher: IEEE
Year: 1980
Tongue: English
Weight: 938 KB
Volume: 27
Category: Article
ISSN: 0018-9383
DOI: 10.1109/t-ed.1980.20040

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Characteristics of self-induced lightly-

Characteristics of self-induced lightly-doped-drain polycrystalline silicon thin film transistors with liquid-phase deposition SiO2 as gate-insulator and passivation-layer

✍ Ching-Fa Yeh; Tzung-Zu Yang; Tai-Ju Chen 📂 Article 📅 1995 🏛 IEEE 🌐 English ⚖ 767 KB

The effects of source/drain and gate ove

The effects of source/drain and gate overlap on the performance of carbon nanotube field effect transistors

✍ Ali Naderi; Parviz Keshavarzi 📂 Article 📅 2012 🏛 Elsevier Science 🌐 English ⚖ 981 KB

The present status of modulation-doped a

The present status of modulation-doped and insulated-gate field-effect transistors in III–V semiconductors

✍ Takashi Mimura 📂 Article 📅 1982 🏛 Elsevier Science ⚖ 45 KB

The present status of modulation-doped a

The present status of modulation-doped and insulated-gate field-effect transistors in III–V semiconductors

✍ Takashi Mimura 📂 Article 📅 1982 🏛 Elsevier Science 🌐 English ⚖ 600 KB

A simple and accurate approximation to t

A simple and accurate approximation to the high-frequency characteristics of insulated-gate field-effect transistors

✍ J.A. van Nielen 📂 Article 📅 1969 🏛 Elsevier Science 🌐 English ⚖ 305 KB

Device physics and guiding principles fo

Device physics and guiding principles for the design of double-gate tunneling field effect transistor with silicon-germanium source heterojunction

✍ Toh, Eng Huat (author);Wang, Grace Huiqi (author);Chan, Lap (author);Samudra, Ga 📂 Article 📅 2007 🏛 American Institute of Physics 🌐 English ⚖ 665 KB