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The present status of modulation-doped and insulated-gate field-effect transistors in III–V semiconductors

✍ Scribed by Takashi Mimura

Publisher: Elsevier Science
Year: 1982
Weight: 45 KB
Volume: 113
Category: Article
ISSN: 0167-2584
DOI: 10.1016/0167-2584(82)90508-4

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📂 Article 📅 1972 🏛 Elsevier Science 🌐 English ⚖ 109 KB