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Tunnel Field-Effect Transistors Based on InP-GaAs Heterostructure Nanowires

✍ Scribed by Ganjipour, Bahram; Wallentin, Jesper; Borgström, Magnus T.; Samuelson, Lars; Thelander, Claes

Book ID: 121223559
Publisher: American Chemical Society
Year: 2012
Tongue: English
Weight: 311 KB
Volume: 6
Category: Article
ISSN: 1936-0851
DOI: 10.1021/nn204838m

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