✦ LIBER ✦
InP-based heterostructure field-effect transistors with high-quality short-period (InAs)3m/(GaAs)1m superlattice channel layers
✍ Scribed by U. Auer; R. Reuter; C. Heedt; W. Prost; F.J. Tegude
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 369 KB
- Volume
- 150
- Category
- Article
- ISSN
- 0022-0248
No coin nor oath required. For personal study only.