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Modeling the operation of field-effect transistors based on GaAs/AlGaAs heterostructures

✍ Scribed by A. K. Shestakov; K. S. Zhuravlev


Book ID
111511012
Publisher
Allerton Press Inc
Year
2009
Tongue
English
Weight
166 KB
Volume
45
Category
Article
ISSN
8756-6990

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Effect of interface roughness on I–V rel
✍ Y. Fu; Y.-M. Mu; M. Willander πŸ“‚ Article πŸ“… 1998 πŸ› Elsevier Science 🌐 English βš– 149 KB

We have modelled the interface roughness by Al atoms protruding into the GaAs layer at the AlGaAs/GaAs heterointerface. The I sd -V sd relation is calculated to study the effect of the interface roughness on the carrier transport in an AlGaAs/GaAs heterojunction field effect transistor. With ideal c