Effect of interface roughness on I–V relation of AlGaAs/GaAs heterojunction field effect transistor

✍ Scribed by Y. Fu; Y.-M. Mu; M. Willander

• Publisher: Elsevier Science
• Year: 1998
• Tongue: English
• Weight: 149 KB
• Volume: 23
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1006/spmi.1996.0434

✦ Synopsis

We have modelled the interface roughness by Al atoms protruding into the GaAs layer at the AlGaAs/GaAs heterointerface. The I sd -V sd relation is calculated to study the effect of the interface roughness on the carrier transport in an AlGaAs/GaAs heterojunction field effect transistor. With ideal conduction, I sd -V sd relation is linear. The current becomes saturated when the Fermi level in the drain drops below the conduction bandedge of the source. Electron waves become scattered by interface roughness and the current is decreased. However, the interface roughness effect is small due to small size of scattering centers.