We have modelled the interface roughness by Al atoms protruding into the GaAs layer at the AlGaAs/GaAs heterointerface. The I sd -V sd relation is calculated to study the effect of the interface roughness on the carrier transport in an AlGaAs/GaAs heterojunction field effect transistor. With ideal c
✦ LIBER ✦
Effect of the velocity-field peak on I–V characteristics of GaAs FET's
✍ Scribed by S. Chaudhuri; D.C. Look
- Publisher
- Elsevier Science
- Year
- 1983
- Tongue
- English
- Weight
- 238 KB
- Volume
- 26
- Category
- Article
- ISSN
- 0038-1101
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