Study of the effect of the gate region parameters on static characteristics of microwave field-effect transistors based on pseudomorphic AlGaAs-InGaAs-GaAs heterostructures

✍ Scribed by V. G. Tikhomirov; N. A. Maleev; A. G. Kuzmenkov; Yu. V. Solov’ev; A. G. Gladyshev; M. M. Kulagina; V. E. Zemlyakov; K. V. Dudinov; V. B. Yankevich; A. V. Bobyl; V. M. Ustinov

• Book ID: 111445059
• Publisher: Springer
• Year: 2011
• Tongue: English
• Weight: 189 KB
• Volume: 45
• Category: Article
• ISSN: 1063-7826
• DOI: 10.1134/s1063782611100216