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Effect of the active region thickness on characteristics of semiconductor lasers based on asymmetric AlGaAs/GaAs/InGaAs heterostructures with broadened waveguide

✍ Scribed by D. A. Vinokurov; V. V. Vasilyeva; V. A. Kapitonov; A. V. Lyutetskiy; D. N. Nikolaev; N. A. Pikhtin; S. O. Slipchenko; A. L. Stankevich; V. V. Shamakhov; N. V. Fetisova; I. S. Tarasov

Book ID: 111444561
Publisher: Springer
Year: 2010
Tongue: English
Weight: 131 KB
Volume: 44
Category: Article
ISSN: 1063-7826
DOI: 10.1134/s106378261002017x

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