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Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures

✍ Scribed by Britnell, L.; Gorbachev, R. V.; Jalil, R.; Belle, B. D.; Schedin, F.; Mishchenko, A.; Georgiou, T.; Katsnelson, M. I.; Eaves, L.; Morozov, S. V.; Peres, N. M. R.; Leist, J.; Geim, A. K.; Novoselov, K. S.; Ponomarenko, L. A.

Book ID: 119945407
Publisher: AAAS
Year: 2012
Tongue: English
Weight: 825 KB
Volume: 335
Category: Article
DOI: 10.1126/science.1218461

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