✦ LIBER ✦

Tuning of Fermi level position at HfN[sub x]/SiO[sub 2] interface

✍ Scribed by Rothschild, J. A.; Eizenberg, M.

Book ID: 121705650
Publisher: American Institute of Physics
Year: 2009
Tongue: English
Weight: 470 KB
Volume: 94
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.3089818

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Chemistry at the graphene-SiO[sub 2] int

Chemistry at the graphene-SiO[sub 2] interface

✍ Hossain, M. Zubaer 📂 Article 📅 2009 🏛 American Institute of Physics 🌐 English ⚖ 498 KB

Excess silicon at the Si[sub 3]N[sub 4]/

Excess silicon at the Si[sub 3]N[sub 4]/SiO[sub 2] interface

✍ V. A. Gritsenko; I. P. Petrenko; S. N. Svitasheva; H. Wong 📂 Article 📅 1998 🏛 American Institute of Physics 🌐 English ⚖ 329 KB

Electronic properties of Ge dangling bon

Electronic properties of Ge dangling bond centers at Si[sub 1âx]Ge[sub x]/SiO[sub 2] interfaces

✍ Afanasâev, V. V.; Houssa, M.; Stesmans, A.; Souriau, L.; Loo, R.; Meuris, M. 📂 Article 📅 2009 🏛 American Institute of Physics 🌐 English ⚖ 382 KB

Dual role of fluorine at the SiâSiO[su

Dual role of fluorine at the SiâSiO[sub 2] interface

✍ Tsetseris, L.; Zhou, X. J.; Fleetwood, D. M.; Schrimpf, R. D.; Pantelides, S. T. 📂 Article 📅 2004 🏛 American Institute of Physics 🌐 English ⚖ 342 KB

Interface formation and energy level ali

Interface formation and energy level alignment of pentacene on SiO[sub 2]

✍ N. J. Watkins; Y. Gao 📂 Article 📅 2003 🏛 American Institute of Physics 🌐 English ⚖ 357 KB

Infrared studies of transition layers at

Infrared studies of transition layers at SiO[sub 2]/Si interface

✍ Ono, Haruhiko; Ikarashi, Taeko; Ando, Koichi; Kitano, Tomohisa 📂 Article 📅 1998 🏛 American Institute of Physics 🌐 English ⚖ 384 KB