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Trap Levels in RF Sputtered CdS Thin Films

✍ Scribed by Ashour, H. ;El Akkad, F.

Publisher
John Wiley and Sons
Year
2001
Tongue
English
Weight
70 KB
Volume
184
Category
Article
ISSN
0031-8965

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✦ Synopsis

The trap levels in CdS thin films prepared by rf magnetron sputtering have been investigated using Photoinduced Current Transient Spectroscopy (PICTS). Trap levels in the range 0.08-1.06 eV have been detected. Those levels are tentatively attributed to native defects and foreign impurities (particularly Cu and Ag).

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