The trap levels in CdS thin films prepared by rf magnetron sputtering have been investigated using Photoinduced Current Transient Spectroscopy (PICTS). Trap levels in the range 0.08-1.06 eV have been detected. Those levels are tentatively attributed to native defects and foreign impurities (particul
CdS Thin Films Prepared by RF Magnetron Sputtering in Ar Atmosphere
β Scribed by Punnoose, A. ;Marafi, M. ;Prabu, G. ;El-Akkad, F.
- Publisher
- John Wiley and Sons
- Year
- 2000
- Tongue
- English
- Weight
- 162 KB
- Volume
- 177
- Category
- Article
- ISSN
- 0031-8965
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β¦ Synopsis
CdS thin films were prepared using rf planar magnetron sputtering in Ar atmosphere. Different deposition temperatures between 150 and 250 C and different rf powers between 30 and 130 W were used. The films had hexagonal structure with crystallites oriented in the h100i direction. The increase of deposition temperature caused an increase in the crystallite size (from 380 to 450 # e) and a decrease in the resistivity (from 3.87 to 0.95 W cm). The increase in the rf power (from 30 to 130 W) caused a decrease in the grain size (from 480 to 320 # e) and an increase in the resistivity (from 0.51 to 2.05 W cm) above 70 W. The average optical transmission in the visible region of the spectrum ranged between 71 and 86%. The quality of the films as window layers for solar cell applications was investigated.
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