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CdS Thin Films Prepared by RF Magnetron Sputtering in Ar Atmosphere

✍ Scribed by Punnoose, A. ;Marafi, M. ;Prabu, G. ;El-Akkad, F.


Publisher
John Wiley and Sons
Year
2000
Tongue
English
Weight
162 KB
Volume
177
Category
Article
ISSN
0031-8965

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✦ Synopsis


CdS thin films were prepared using rf planar magnetron sputtering in Ar atmosphere. Different deposition temperatures between 150 and 250 C and different rf powers between 30 and 130 W were used. The films had hexagonal structure with crystallites oriented in the h100i direction. The increase of deposition temperature caused an increase in the crystallite size (from 380 to 450 # e) and a decrease in the resistivity (from 3.87 to 0.95 W cm). The increase in the rf power (from 30 to 130 W) caused a decrease in the grain size (from 480 to 320 # e) and an increase in the resistivity (from 0.51 to 2.05 W cm) above 70 W. The average optical transmission in the visible region of the spectrum ranged between 71 and 86%. The quality of the films as window layers for solar cell applications was investigated.


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Trap Levels in RF Sputtered CdS Thin Fil
✍ Ashour, H. ;El Akkad, F. πŸ“‚ Article πŸ“… 2001 πŸ› John Wiley and Sons 🌐 English βš– 70 KB πŸ‘ 1 views

The trap levels in CdS thin films prepared by rf magnetron sputtering have been investigated using Photoinduced Current Transient Spectroscopy (PICTS). Trap levels in the range 0.08-1.06 eV have been detected. Those levels are tentatively attributed to native defects and foreign impurities (particul