Transition of dominant instability mechanism depending on negative gate bias under illumination in amorphous In-Ga-Zn-O thin film transistor

✍ Scribed by Oh, Himchan; Yoon, Sung-Min; Ryu, Min Ki; Hwang, Chi-Sun; Yang, Shinhyuk; Park, Sang-Hee Ko

• Book ID: 121705086
• Publisher: American Institute of Physics
• Year: 2011
• Tongue: English
• Weight: 557 KB
• Volume: 98
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.3540500