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Towards a multiscale approach to the growth of silicon films by chemical vapor deposition

✍ Scribed by Maurizio Masi; Valeria Bertani; Carlo Cavallotti; Sergio Carrà

Book ID
114192482
Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
235 KB
Volume
66
Category
Article
ISSN
0254-0584

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## Abstract We have deposited indium oxide (In~2~O~3~) films on silicon substrates by the metal organic chemical vapor deposition (MOCVD). We have investigated the effect of substrate temperature on growth and structural properties of films in the range of 200–300 °C. The films had a preferred orie