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Titanium nitride as promising gate electrode for MOS technology

✍ Scribed by Lucas P. B. Lima; Milena A. Moreira; José A. Diniz; Ioshiaki Doi

Book ID
112182344
Publisher
John Wiley and Sons
Year
2012
Tongue
English
Weight
329 KB
Volume
9
Category
Article
ISSN
1862-6351

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## Abstract Pure and diluted Ti[N(Et)~2~]~4~ precursors are used to grow TiN layers at 400–600 °C by using atomic vapor deposition (AVD®). The composition, microstructure, and electrical properties of TiN films with various thicknesses are investigated. The determined work function of 4.7 eV indica