A nitride-isolated molybdenum-polysilicon gate electrode for MOS VLSI circuits

✍ Scribed by Ito, T.; Horie, H.; Fukano, T.; Ishikawa, H.

• Book ID: 114595532
• Publisher: IEEE
• Year: 1986
• Tongue: English
• Weight: 670 KB
• Volume: 33
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/t-ed.1986.22513