TiN/titanium–aluminum oxynitride/Si as new gate structure for 3D MOS technology

✍ Scribed by J. Miyoshi; L.P.B. Lima; J.A. Diniz; F.A. Cavarsan; I. Doi; J. Godoy Filho; A.R. Silva

• Book ID: 113797841
• Publisher: Elsevier Science
• Year: 2012
• Tongue: English
• Weight: 525 KB
• Volume: 92
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/j.mee.2011.05.015