✦ LIBER ✦
Titanium–aluminum oxynitride (TAON) as high-k gate dielectric for sub-32 nm CMOS technology
✍ Scribed by J. Miyoshi; J.A. Diniz; A.D. Barros; I. Doi; A.A.G. Von Zuben
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 306 KB
- Volume
- 87
- Category
- Article
- ISSN
- 0167-9317
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