Titanium nitride: A new Ohmic contact material for n-type CdS
β Scribed by Didden, Arjen; Battjes, Hemme; Machunze, Raymond; Dam, Bernard; van de Krol, Roel
- Book ID
- 120399289
- Publisher
- American Institute of Physics
- Year
- 2011
- Tongue
- English
- Weight
- 621 KB
- Volume
- 110
- Category
- Article
- ISSN
- 0021-8979
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Results are presented on the use of A1-Ni-Sn metallization system as a common metallization scheme to realize ohmic contacts to both p-type and n-type GaAs. The ohmic contacts yield a specific contact resistance in the range from 10 --~ to 10 -4 if2 cm 2 for both p-type and n-type GaAs. The presence
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