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InxGa1−xAs ohmic contacts to n-type GaAs with a tungsten nitride barrier

✍ Scribed by Chihiro J. Uchibori; Y. Ohtani; T. Oku; Naoki Ono; Masanori Murakami

Book ID
107457495
Publisher
Springer US
Year
1997
Tongue
English
Weight
838 KB
Volume
26
Category
Article
ISSN
0361-5235

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A common metallization scheme for ohmic
A common metallization scheme for ohmic contacts to n-type and p-type GaAs: the AlNiSn system
✍ Krishnamachar Prasad 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 250 KB

Results are presented on the use of A1-Ni-Sn metallization system as a common metallization scheme to realize ohmic contacts to both p-type and n-type GaAs. The ohmic contacts yield a specific contact resistance in the range from 10 --~ to 10 -4 if2 cm 2 for both p-type and n-type GaAs. The presence