Time-resolved measurement of single-electron tunneling in a Si single-electron transistor with satellite Si islands
β Scribed by Fujiwara, A.; Takahashi, Y.; Murase, K.; Tabe, M.
- Book ID
- 120181226
- Publisher
- American Institute of Physics
- Year
- 1995
- Tongue
- English
- Weight
- 304 KB
- Volume
- 67
- Category
- Article
- ISSN
- 0003-6951
- DOI
- 10.1063/1.114824
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Transport in a silicon single-electron transistor is theoretically studied. By solving a master equation, assuming that the potential barrier has a parabolic potential, we show that the linear conductance has an activated behavior at high temperatures. This result is in quantitative agreement with a
We have successfully fabricated a single-electron transistor based on undoped Si nanocrystals having radii of approximately 3-5 nm. The energy band structure of the Si dot consists of a set of discrete sublevels and a quasi-continuous band. By self-consistently solving the 3D SchrΓΆdinger and Poisson