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Fluctuation of average position of electrons in Coulomb island in Si single-electron transistor

โœ Scribed by Seiji Horiguchi; Akira Fujiwara


Book ID
113937378
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
989 KB
Volume
520
Category
Article
ISSN
0040-6090

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Transport in a silicon single-electron transistor is theoretically studied. By solving a master equation, assuming that the potential barrier has a parabolic potential, we show that the linear conductance has an activated behavior at high temperatures. This result is in quantitative agreement with a