✦ LIBER ✦

Theory of activated conduction in a Si single-electron transistor

✍ Scribed by Hiroyuki Tamura; Yasuo Takahashi; Katsumi Murase

Publisher: Elsevier Science
Year: 1999
Tongue: English
Weight: 242 KB
Volume: 47
Category: Article
ISSN: 0167-9317
DOI: 10.1016/s0167-9317(99)00197-5

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✦ Synopsis

Transport in a silicon single-electron transistor is theoretically studied. By solving a master equation, assuming that the potential barrier has a parabolic potential, we show that the linear conductance has an activated behavior at high temperatures. This result is in quantitative agreement with a recent experimental observation.

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