Carrier conduction in a Si-nanocrystal-based single-electron transistor-I. Effect of gate bias

Carrier conduction in a Si-nanocrystal-b

Carrier conduction in a Si-nanocrystal-based single-electron transistor-II. Effect of drain bias

✍ Y. Fu; M. Willander; A. Dutta; S. Oda 📂 Article 📅 2000 🏛 Elsevier Science 🌐 English ⚖ 264 KB

We have successfully fabricated a single-electron transistor based on undoped Si nanocrystals having radii of approximately 3-5 nm. The energy band structure of the Si dot consists of a set of discrete sublevels and a quasi-continuous band. By self-consistently solving the 3D Schrödinger and Poisson