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Study of random telegraph signals in a GaAs/AlxGa1 − xAs single electron transistor

✍ Scribed by T. Sakamoto; K. Nakamura

Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
104 KB
Volume
23
Category
Article
ISSN
0749-6036

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✦ Synopsis

A GaAs/Al x Ga 1-x As heterointerface contains charge traps, which can capture and emit a single electron stochastically. We study random telegraph signals (RTSs) from these traps using a single electron tunneling (SET) transistor formed in the heterostructure. The output of the SET transistor switches between two states, corresponding to the capture and emission of a single electron. The occurrence of RTS depends on the variation in the potential modified by negatively biased Schottky gates. These gate voltage dependences indicate the spatial positions of traps. Moreover, we investigate the interaction between trappings.

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